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IXTA3N50P

MOSFET N-CH 500V 3.6A D2PAK


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXTA3N50P
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 261
  • Description: MOSFET N-CH 500V 3.6A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHV™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 409pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 180 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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