Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2006 |
Series | PolarHV™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | 500V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | 8A |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 150W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 800m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Rise Time | 28ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 23 ns |
Turn-Off Delay Time | 65 ns |
Continuous Drain Current (ID) | 8A |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 8A |
Drain-source On Resistance-Max | 0.8Ohm |
Drain to Source Breakdown Voltage | 500V |
Avalanche Energy Rating (Eas) | 400 mJ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |