IXTP1R4N120P
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Power Dissipation-Max | 86W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 86W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 666pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24.8nC @ 10V |
| Rise Time | 27ns |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 78 ns |
| Continuous Drain Current (ID) | 1.4A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 1.2kV |
| Pulsed Drain Current-Max (IDM) | 3A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | Polar™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
See Relate Datesheet
