IXTQ200N10T
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 50A, 10V |
| Package / Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9400pF @ 25V |
| Number of Pins | 3 |
| Current - Continuous Drain (Id) @ 25°C | 200A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 152nC @ 10V |
| Transistor Element Material | SILICON |
| Rise Time | 31ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Operating Temperature | -55°C~175°C TJ |
| Vgs (Max) | ±30V |
| Packaging | Tube |
| Fall Time (Typ) | 34 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Breakdown Voltage | 100V |
| Published | 2008 |
| Pulsed Drain Current-Max (IDM) | 500A |
| Avalanche Energy Rating (Eas) | 1500 mJ |
| Series | TrenchMV™ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 5.5MOhm |
| Terminal Finish | PURE TIN |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 550W Tc |
| Element Configuration | Single |
| Factory Lead Time | 1 Week |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 550W |
| Mount | Through Hole |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
See Relate Datesheet
