banner_page

IXTQ82N25P

MOSFET N-CH 250V 82A TO-3P


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXTQ82N25P
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 440
  • Description: MOSFET N-CH 250V 82A TO-3P (Kg)

Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 1000 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHT™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 41A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 82A
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good