Parameters | |
---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Gate to Source Voltage (Vgs) | 20V |
Reach Compliance Code | not_compliant |
Drain to Source Breakdown Voltage | 250V |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pulsed Drain Current-Max (IDM) | 250A |
Pin Count | 4 |
Avalanche Energy Rating (Eas) | 2000 mJ |
RoHS Status | ROHS3 Compliant |
JESD-30 Code | R-PSSO-G2 |
Lead Free | Lead Free |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 600W Tc |
Factory Lead Time | 1 Week |
Element Configuration | Single |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Operating Mode | ENHANCEMENT MODE |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Transistor Element Material | SILICON |
Power Dissipation | 600W |
Case Connection | DRAIN |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
FET Type | N-Channel |
Published | 2006 |
Transistor Application | SWITCHING |
Series | PolarHT™ |
Rds On (Max) @ Id, Vgs | 24m Ω @ 50A, 10V |
JESD-609 Code | e3 |
Pbfree Code | yes |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Part Status | Active |
Input Capacitance (Ciss) (Max) @ Vds | 6300pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Number of Terminations | 2 |
Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V |
ECCN Code | EAR99 |
Rise Time | 26ns |
Resistance | 27MOhm |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Terminal Finish | Matte Tin (Sn) |
Vgs (Max) | ±20V |
Additional Feature | AVALANCHE RATED |
Fall Time (Typ) | 28 ns |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Turn-Off Delay Time | 100 ns |
Continuous Drain Current (ID) | 100A |