Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 2.6MOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.6 Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Rise Time | 33ns |
Drain to Source Voltage (Vdss) | 1200V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 18 ns |
Turn-Off Delay Time | 42 ns |
Continuous Drain Current (ID) | 6A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 6A |
Drain to Source Breakdown Voltage | 1.2kV |
Pulsed Drain Current-Max (IDM) | 24A |
Avalanche Energy Rating (Eas) | 500 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |