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IXTX24N100

MOSFET N-CH 1000V 24A PLUS247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXTX24N100
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 367
  • Description: MOSFET N-CH 1000V 24A PLUS247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 568W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 267nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 96A
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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