Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | GenX3™, XPT™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 270W |
Input Type | Standard |
Power - Max | 270W |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.85V |
Max Collector Current | 60A |
Collector Emitter Breakdown Voltage | 600V |
Test Condition | 400V, 24A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 24A |
IGBT Type | PT |
Gate Charge | 39nC |
Current - Collector Pulsed (Icm) | 115A |
Td (on/off) @ 25°C | 23ns/97ns |
Switching Energy | 550μJ (on), 500μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
RoHS Status | ROHS3 Compliant |