Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | GenX3™, XPT™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 600W |
Base Part Number | IXX*N60 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 600W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 24 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 62 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 100A |
Reverse Recovery Time | 25 ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.3V |
Turn On Time | 69 ns |
Test Condition | 360V, 36A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 36A |
Turn Off Time-Nom (toff) | 170 ns |
IGBT Type | PT |
Gate Charge | 64nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 24ns/62ns |
Switching Energy | 720μJ (on), 330μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |