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IXXH60N65C4

IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXXH60N65C4
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 577
  • Description: IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Series GenX4™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 455W
Element Configuration Single
Power Dissipation 455W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 118A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.8V
Test Condition 400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 60A
IGBT Type PT
Gate Charge 94nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 37ns/133ns
Switching Energy 3.2mJ (on), 830μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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