Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | GenX4™, XPT™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 940W |
Base Part Number | 160N65 |
Element Configuration | Single |
Power Dissipation | 940W |
Input Type | Standard |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.8V |
Max Collector Current | 310A |
Collector Emitter Breakdown Voltage | 650V |
Collector Emitter Saturation Voltage | 1.54V |
Test Condition | 400V, 80A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 160A |
IGBT Type | PT |
Gate Charge | 425nC |
Current - Collector Pulsed (Icm) | 860A |
Td (on/off) @ 25°C | 52ns/220ns |
Switching Energy | 3.3mJ (on), 1.88mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
RoHS Status | ROHS3 Compliant |