Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2012 |
Series | GenX3™, XPT™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | AVALANCHE RATED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 2.3kW |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 2300W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.6V |
Max Collector Current | 550A |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 137 ns |
Test Condition | 400V, 100A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 100A |
Turn Off Time-Nom (toff) | 430 ns |
IGBT Type | PT |
Gate Charge | 460nC |
Current - Collector Pulsed (Icm) | 1140A |
Td (on/off) @ 25°C | 50ns/190ns |
Switching Energy | 3.45mJ (on), 2.86mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
RoHS Status | ROHS3 Compliant |