IXXP50N60B3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | XPT™, GenX3™ |
| Part Status | Active |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Reach Compliance Code | compliant |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 600W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 40ns |
| JEDEC-95 Code | TO-220AB |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 120A |
| Power Dissipation-Max (Abs) | 600W |
| Turn On Time | 75 ns |
| Test Condition | 360V, 36A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 36A |
| Turn Off Time-Nom (toff) | 320 ns |
| Gate Charge | 70nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 27ns/150ns |
| Switching Energy | 670μJ (on), 1.2mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
