banner_page

IXXR110N65B4H1

IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXXR110N65B4H1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 880
  • Description: IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX4™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 455W
Base Part Number 110N65
Element Configuration Single
Power Dissipation 455W
Input Type Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 150A
Reverse Recovery Time 100ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.75V
Test Condition 400V, 55A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 110A
IGBT Type PT
Gate Charge 183nC
Current - Collector Pulsed (Icm) 460A
Td (on/off) @ 25°C 38ns/156ns
Switching Energy 2.2mJ (on), 1.05mJ (off)
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good