IXXX110N65B4H1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | GenX4™, XPT™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 880W |
| Reach Compliance Code | not_compliant |
| Base Part Number | 110N65 |
| Element Configuration | Single |
| Power Dissipation | 880W |
| Input Type | Standard |
| Turn On Delay Time | 26 ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 146 ns |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 240A |
| Reverse Recovery Time | 100 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.75V |
| Test Condition | 400V, 55A, 2 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| IGBT Type | PT |
| Gate Charge | 183nC |
| Current - Collector Pulsed (Icm) | 630A |
| Td (on/off) @ 25°C | 38ns/156ns |
| Switching Energy | 2.2mJ (on), 1.05mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
