Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | XPT™, GenX3™ |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Reach Compliance Code | not_compliant |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 1630W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 100ns |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 380A |
Power Dissipation-Max (Abs) | 1630W |
Turn On Time | 140 ns |
Test Condition | 360V, 100A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
Turn Off Time-Nom (toff) | 395 ns |
Gate Charge | 315nC |
Current - Collector Pulsed (Icm) | 900A |
Td (on/off) @ 25°C | 48ns/160ns |
Switching Energy | 2.85mJ (on), 4.4mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
RoHS Status | RoHS Compliant |