IXXX300N60B3
| Parameters | |
|---|---|
| Input Type | Standard |
| Power - Max | 2300W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Max Collector Current | 550A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.3V |
| Turn On Time | 137 ns |
| Test Condition | 400V, 100A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 430 ns |
| IGBT Type | PT |
| Gate Charge | 460nC |
| Current - Collector Pulsed (Icm) | 1140A |
| Td (on/off) @ 25°C | 50ns/190ns |
| Switching Energy | 3.45mJ (on), 2.86mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | GenX3™, XPT™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| HTS Code | 8541.90.00.00 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 2.3kW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.3kW |
| Case Connection | COLLECTOR |
See Relate Datesheet
