IXYB82N120C3H1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Number of Pins | 264 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | GenX3™, XPT™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.04kW |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.04kW |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 29 ns |
| Power - Max | 1040W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 192 ns |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 164A |
| Reverse Recovery Time | 420 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.75V |
| Turn On Time | 119 ns |
| Test Condition | 600V, 80A, 2 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 82A |
| Turn Off Time-Nom (toff) | 295 ns |
| Gate Charge | 215nC |
| Current - Collector Pulsed (Icm) | 320A |
| Td (on/off) @ 25°C | 29ns/192ns |
| Switching Energy | 4.95mJ (on), 2.78mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Height | 26.59mm |
| Length | 20.29mm |
| Width | 5.31mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
