Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | GenX3™, XPT™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 230W |
Base Part Number | IXY*20N120 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 230W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 36A |
Reverse Recovery Time | 195ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 4V |
Turn On Time | 60 ns |
Test Condition | 600V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
Turn Off Time-Nom (toff) | 220 ns |
Gate Charge | 53nC |
Current - Collector Pulsed (Icm) | 88A |
Td (on/off) @ 25°C | 20ns/90ns |
Switching Energy | 1.3mJ (on), 500μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Height | 21.46mm |
Length | 16.26mm |
Width | 5.3mm |
RoHS Status | ROHS3 Compliant |