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IXYH40N90C3D1

IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXYH40N90C3D1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 980
  • Description: IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Number of Elements 1
Element Configuration Single
Power Dissipation 500W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 90A
Reverse Recovery Time 100ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 81 ns
Test Condition 450V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 237 ns
Gate Charge 74nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 27ns/78ns
Switching Energy 1.9mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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