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IXYH50N65C3D1

IXYS SEMICONDUCTOR IXYH50N65C3D1 IGBT Single Transistor, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 Pins


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXYH50N65C3D1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 984
  • Description: IXYS SEMICONDUCTOR IXYH50N65C3D1 IGBT Single Transistor, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 Pins (Kg)

Details

Tags

Parameters
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series XPT™, GenX3™
Part Status Active
ECCN Code EAR99
Max Power Dissipation 600W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Reverse Recovery Time 36ns
Collector Emitter Breakdown Voltage 650V
Current - Collector (Ic) (Max) 132A
Collector Emitter Saturation Voltage 2.1V
Test Condition 400V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 36A
Gate Charge 86nC
Current - Collector Pulsed (Icm) 250A
Td (on/off) @ 25°C 20ns/90ns
Switching Energy 800μJ (on), 800μJ (off)
REACH SVHC No SVHC
See Relate Datesheet

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