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IXYH60N90C3

IGBT 900V 140A 750W C3 TO-247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXYH60N90C3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 928
  • Description: IGBT 900V 140A 750W C3 TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 750W
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 140A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 104 ns
Test Condition 450V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 60A
Turn Off Time-Nom (toff) 268 ns
Gate Charge 107nC
Current - Collector Pulsed (Icm) 310A
Td (on/off) @ 25°C 30ns/87ns
Switching Energy 2.7mJ (on), 1.55mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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