Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | GenX3™, XPT™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 750W |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 750W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.7V |
Max Collector Current | 140A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 900V |
Collector Emitter Saturation Voltage | 2.7V |
Turn On Time | 104 ns |
Test Condition | 450V, 60A, 3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 60A |
Turn Off Time-Nom (toff) | 268 ns |
Gate Charge | 107nC |
Current - Collector Pulsed (Icm) | 310A |
Td (on/off) @ 25°C | 30ns/87ns |
Switching Energy | 2.7mJ (on), 1.55mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
RoHS Status | ROHS3 Compliant |