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IXYK120N120C3

IGBT 1200V 240A 1500W TO264


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXYK120N120C3
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 227
  • Description: IGBT 1200V 240A 1500W TO264 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.5kW
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5kW
Case Connection COLLECTOR
Input Type Standard
Power - Max 1500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 240A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.55V
Turn On Time 105 ns
Test Condition 600V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 120A
Turn Off Time-Nom (toff) 346 ns
Gate Charge 412nC
Current - Collector Pulsed (Icm) 700A
Td (on/off) @ 25°C 35ns/176ns
Switching Energy 6.75mJ (on), 5.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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