Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | GenX3™, XPT™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1.5kW |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1.5kW |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 1500W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 3.2V |
Max Collector Current | 240A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.55V |
Turn On Time | 105 ns |
Test Condition | 600V, 100A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 120A |
Turn Off Time-Nom (toff) | 346 ns |
Gate Charge | 412nC |
Current - Collector Pulsed (Icm) | 700A |
Td (on/off) @ 25°C | 35ns/176ns |
Switching Energy | 6.75mJ (on), 5.1mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |