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IXYP8N90C3D1

IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXYP8N90C3D1
  • Package: TO-220-3
  • Datasheet: -
  • Stock: 591
  • Description: IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs (Kg)

Details

Tags

Parameters
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 20A
Reverse Recovery Time 114 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 39 ns
Test Condition 450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A
Turn Off Time-Nom (toff) 238 ns
Gate Charge 13.3nC
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 16ns/40ns
Switching Energy 460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Operating Temperature 175°C
See Relate Datesheet

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