IXYX100N120B3
| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 600V, 100A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 100A |
| IGBT Type | PT |
| Gate Charge | 250nC |
| Current - Collector Pulsed (Icm) | 530A |
| Td (on/off) @ 25°C | 30ns/153ns |
| Switching Energy | 7.7mJ (on), 7.1mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Height | 21.34mm |
| Length | 16.13mm |
| Width | 5.21mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 247 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | GenX3™, XPT™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.15kW |
| Reach Compliance Code | unknown |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 1150W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Max Collector Current | 225A |
See Relate Datesheet
