Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
Published | 1996 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | J109 |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power - Max | 400mW |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V VGS |
Drain-source On Resistance-Max | 12Ohm |
DS Breakdown Voltage-Min | 25V |
FET Technology | JUNCTION |
Power Dissipation-Max (Abs) | 0.4W |
Feedback Cap-Max (Crss) | 15 pF |
Source Url Status Check Date | 2013-06-14 00:00:00 |
Current - Drain (Idss) @ Vds (Vgs=0) | 80mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 2V @ 1μA |
Voltage - Breakdown (V(BR)GSS) | 25V |
Resistance - RDS(On) | 12Ohm |
RoHS Status | ROHS3 Compliant |