Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount, Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Weight | 200.998119mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Other Transistors |
Voltage - Rated DC | 35V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Current Rating | 50mA |
Base Part Number | J112 |
Number of Elements | 1 |
Voltage | 35V |
Element Configuration | Single |
Current | 5A |
Operating Mode | DEPLETION MODE |
Power Dissipation | 625mW |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Drain to Source Voltage (Vdss) | 35V |
Continuous Drain Current (ID) | 5mA |
Gate to Source Voltage (Vgs) | -35V |
Input Capacitance | 7pF |
FET Technology | JUNCTION |
Drain to Source Resistance | 50Ohm |
Feedback Cap-Max (Crss) | 5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA |
Resistance - RDS(On) | 50Ohm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |