J112,126
| Parameters | |
|---|---|
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Resistance - RDS(On) | 50Ohm |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | J112 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Power - Max | 400mW |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V VGS |
| Drain-source On Resistance-Max | 50Ohm |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | JUNCTION |
| Power Dissipation-Max (Abs) | 0.4W |
| Source Url Status Check Date | 2013-06-14 00:00:00 |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
See Relate Datesheet
