JAN1N5819UR-1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 2 weeks ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AB, MELF (Glass) |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 1997 |
| Series | Military, MIL-PRF-19500/586 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Additional Feature | METALLURGICALLY BONDED |
| HTS Code | 8541.10.00.80 |
| Terminal Position | END |
| Terminal Form | WRAP AROUND |
| Pin Count | 2 |
| Reference Standard | MIL-19500/586F |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 50μA @ 45V |
| Voltage - Forward (Vf) (Max) @ If | 490mV @ 1A |
| Case Connection | ISOLATED |
| Forward Current | 1A |
| Operating Temperature - Junction | -65°C~125°C |
| Output Current-Max | 1A |
| Forward Voltage | 800mV |
| Peak Reverse Current | 50μA |
| Max Repetitive Reverse Voltage (Vrrm) | 45V |
| Capacitance @ Vr, F | 70pF @ 5V 1MHz |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
