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JAN2N2880

JAN2N2880 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-JAN2N2880
  • Package: TO-210AA, TO-59-4, Stud
  • Datasheet: PDF
  • Stock: 564
  • Description: JAN2N2880 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

Details

Tags

Parameters
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 2V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 110V
Emitter Base Voltage (VEBO) 8V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Stud
Mounting Type Stud Mount
Package / Case TO-210AA, TO-59-4, Stud
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/315
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2W
Terminal Position UPPER
Terminal Form UNSPECIFIED
See Relate Datesheet

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