JAN2N3637UB
| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 1W |
| Power - Max | 1.5W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 175V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Collector Base Voltage (VCBO) | 175V |
| Emitter Base Voltage (VEBO) | 5V |
| Turn Off Time-Max (toff) | 650ns |
| Turn On Time-Max (ton) | 200ns |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/357 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
See Relate Datesheet
