JAN2N4957
| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 6 months ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-72-3 Metal Can |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e4 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Gold (Au) - with Nickel (Ni) barrier |
| HTS Code | 8541.21.00.95 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Reference Standard | MIL-19500/426 |
| JESD-30 Code | R-CDSO-N3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 200mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 10V |
| Gain | 25dB |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 30mA |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 0.8pF |
| Noise Figure (dB Typ @ f) | 3.5dB @ 450MHz |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
