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JAN2N6300

JAN2N6300 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-JAN2N6300
  • Package: TO-213AA, TO-66-2
  • Datasheet: PDF
  • Stock: 269
  • Description: JAN2N6300 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

Details

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Parameters
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 75W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 4A 3V
Current - Collector Cutoff (Max) 500μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 80mA, 8A
Current - Collector (Ic) (Max) 8A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/539
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
See Relate Datesheet

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