Parameters | |
---|---|
Power Dissipation-Max | 800mW Ta 15W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 610m Ω @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 3.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 10V |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 3.5A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.6Ohm |
Pulsed Drain Current-Max (IDM) | 14A |
DS Breakdown Voltage-Min | 100V |
Turn Off Time-Max (toff) | 45ns |
Turn On Time-Max (ton) | 40ns |
RoHS Status | Non-RoHS Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-205AF Metal Can |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Series | Military, MIL-PRF-19500/556 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | MIL-19500 |
Qualification Status | Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |