JANTX1N5615
| Parameters | |
|---|---|
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.80 |
| Voltage - Rated DC | 200V |
| Technology | AVALANCHE |
| Terminal Form | WIRE |
| Current Rating | 1A |
| Base Part Number | 1N5615 |
| Pin Count | 2 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 500nA @ 200V |
| Output Current | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 3A |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | -65°C~175°C |
| Forward Voltage | 1.6V |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 1A |
| Reverse Recovery Time | 150 ns |
| Peak Reverse Current | 500nA |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Capacitance @ Vr, F | 45pF @ 12V 1MHz |
| Peak Non-Repetitive Surge Current | 30A |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | A, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 1997 |
| Series | Military, MIL-PRF-19500/429 |
| JESD-609 Code | e0 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 175°C |
See Relate Datesheet
