Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
Contact Plating | Lead, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Bulk |
Published | 2002 |
Series | Military, MIL-PRF-19500/583 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Max Power Dissipation | 1W |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 1W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 120V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA 2V |
Current - Collector Cutoff (Max) | 10μA |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 120V |
Transition Frequency | 30MHz |
Collector Base Voltage (VCBO) | 120V |
Emitter Base Voltage (VEBO) | 4V |
RoHS Status | Non-RoHS Compliant |