Parameters | |
---|---|
Qualification Status | Qualified |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Case Connection | COLLECTOR |
Power - Max | 150W |
Transistor Application | AMPLIFIER |
Transistor Type | PNP - Darlington |
Collector Emitter Voltage (VCEO) | 100V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A 3V |
Current - Collector Cutoff (Max) | 1mA |
Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
Current - Collector (Ic) (Max) | 12A |
Collector Emitter Saturation Voltage | 3V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 5V |
RoHS Status | Non-RoHS Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
Contact Plating | Lead, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 2002 |
Series | Military, MIL-PRF-19500/501 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Position | BOTTOM |
Terminal Form | PIN/PEG |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 2 |
JESD-30 Code | O-MBFM-P2 |