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JANTX2N6800

Trans MOSFET N-CH 400V 3A 3-Pin TO-205AF


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-JANTX2N6800
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: -
  • Stock: 434
  • Description: Trans MOSFET N-CH 400V 3A 3-Pin TO-205AF (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/557
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard MIL-19500
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 34.75nC @ 10V
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-205AF
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 14A
DS Breakdown Voltage-Min 400V
RoHS Status Non-RoHS Compliant
See Relate Datesheet

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