Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-254-3, TO-254AA (Straight Leads) |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 1997 |
Series | Military, MIL-PRF-19500/592 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | PIN/PEG |
Pin Count | 3 |
JESD-30 Code | S-MSFM-P3 |
Qualification Status | Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation-Max | 4W Ta 150W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4W |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 515m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Drain to Source Voltage (Vdss) | 500V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 12A |
Gate to Source Voltage (Vgs) | 20V |
Pulsed Drain Current-Max (IDM) | 48A |
DS Breakdown Voltage-Min | 500V |
Avalanche Energy Rating (Eas) | 750 mJ |
Radiation Hardening | No |
RoHS Status | Non-RoHS Compliant |