Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Reference Standard | MIL-19500/301H |
JESD-30 Code | R-CDSO-N3 |
Qualification Status | Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 200mW |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 400mV |
Max Collector Current | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA 1V |
Current - Collector Cutoff (Max) | 1μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
Collector Emitter Breakdown Voltage | 15V |
Collector Base Voltage (VCBO) | 30V |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 3pF |
RoHS Status | Non-RoHS Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
Contact Plating | Lead, Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 4-SMD, No Lead |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Bulk |
Published | 2007 |
Series | Military, MIL-PRF-19500/301 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.21.00.95 |
Max Power Dissipation | 200mW |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |