Parameters | |
---|---|
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA 1V |
Gain | 21dB |
Current - Collector (Ic) (Max) | 40mA |
Collector Base Voltage (VCBO) | 30V |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 1pF |
Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
Radiation Hardening | No |
RoHS Status | Non-RoHS Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, No Lead |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Bulk |
Published | 2007 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.95 |
Max Power Dissipation | 200mW |
Terminal Position | DUAL |
Pin Count | 3 |
Reference Standard | MIL-19500/343 |
JESD-30 Code | R-CDSO-N3 |
Qualification Status | Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 15V |
Max Collector Current | 40mA |