JANTXV2N3501UB
| Parameters | |
|---|---|
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 500mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Collector Emitter Breakdown Voltage | 150V |
| Turn Off Time-Max (toff) | 1150ns |
| Turn On Time-Max (ton) | 115ns |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Series | Military, MIL-PRF-19500/366 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Reference Standard | MIL-19500/366 |
| JESD-30 Code | R-CDSO-N3 |
See Relate Datesheet
