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JANTXV2N3739

JANTXV2N3739 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-JANTXV2N3739
  • Package: TO-213AA, TO-66-2
  • Datasheet: -
  • Stock: 679
  • Description: JANTXV2N3739 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/402
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 20W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 3
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 250mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2.5V @ 25mA, 250mA
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 325V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
See Relate Datesheet

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