JANTXV2N3811L
| Parameters | |
|---|---|
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/336 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 350mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 8 |
| JESD-30 Code | O-MBCY-W8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS |
| Power - Max | 350mW |
| Polarity/Channel Type | PNP |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA 5V |
See Relate Datesheet
