JANTXV2N6301
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/539 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Pin Count | 3 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 75W |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 2V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
