JANTXV2N930
| Parameters | |
|---|---|
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 300mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 30mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10μA 5V |
| Current - Collector Cutoff (Max) | 2nA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 30MHz |
| Collector Base Voltage (VCBO) | 60V |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/253 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Reference Standard | MIL-19500/253H |
| JESD-30 Code | O-MBCY-W3 |
See Relate Datesheet
