JTDB75
| Parameters | |
|---|---|
| JESD-30 Code | R-CDFM-F2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A 5V |
| Collector Emitter Breakdown Voltage | 55V |
| Gain | 7dB ~ 8.2dB |
| Current - Collector (Ic) (Max) | 8A |
| Frequency - Transition | 960MHz~1.215GHz |
| Highest Frequency Band | L B |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | 55AW |
| Number of Pins | 55 |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Bulk |
| Published | 2016 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Subcategory | BIP RF Small Signal |
| Max Power Dissipation | 220W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
See Relate Datesheet
