KBP106G C2
| Parameters | |
|---|---|
| Technology | Standard |
| Terminal Form | WIRE |
| JESD-30 Code | R-PSIP-W4 |
| Number of Elements | 4 |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 10μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
| Output Current-Max | 1A |
| Current - Average Rectified (Io) | 1A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 30A |
| Voltage - Peak Reverse (Max) | 800V |
| Breakdown Voltage-Min | 800V |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, KBP |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | UL RECOGNIZED |
| HTS Code | 8541.10.00.80 |
| Subcategory | Bridge Rectifier Diodes |
See Relate Datesheet
