KBU1010-G
| Parameters | |
|---|---|
| Additional Feature | UL RECOGNIZED |
| HTS Code | 8541.10.00.80 |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Standard |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSIP-W4 |
| Number of Elements | 4 |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 10μA @ 1000V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 5A |
| Max Reverse Leakage Current | 10μA |
| Max Surge Current | 240A |
| Output Current-Max | 10A |
| Current - Average Rectified (Io) | 10A |
| Number of Phases | 1 |
| Voltage - Peak Reverse (Max) | 1kV |
| Breakdown Voltage-Min | 1000V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, KBU |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tray |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
See Relate Datesheet
